Characterization of and imprint results using indium tin oxide-based step and flash imprint lithography templates

Abstract
As compared to quartz relief structures currently employed, indium tin oxide-based (ITO-based) step and flash imprint lithography templates offer advantages in terms of electron-beam writing, scanning electron microscope inspection, and pattern transfer. The material properties of the ITO have been completely characterized, and data is presented for resistivity, crystal structure, transmission, stress, surface roughness, adhesion, composition, and etch characteristics. For a 600 Å annealed ITO film, the resistivity is approximately 3.5×102 Ω/sq and the optical transmission 77% at 365 nm. The atomic film composition was found to be 31.5% In, 4.3% Sn, and 64.2% O by x-ray photoelectron spectroscopy. When contrasted with SiO2 films, temperature programmed desorption data suggests that hydroxyl groups on the ITO surface bind H2O less strongly but are more abundant. Ultimate verification of compatibility was obtained by imprinting features into an etch barrier layer using an ITO-based template. The fidelity of 20 nm isolated and semi-isolated features, the smallest features present on the template, was successfully reproduced via the imprinting process.