Green Light Emission From GaInNAs/GaN Multiple Quantum Well
- 1 December 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (12B) , L1508
- https://doi.org/10.1143/jjap.37.l1508
Abstract
10 period of multiple quantum well structure of GaN/GaInN/GaInNAs/GaInN was grown on GaN, and the photoluminescence in the green wavelength region of 500–600 nm has been obtained at room temperature for the first time.Keywords
This publication has 3 references indexed in Scilit:
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- GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature PerformanceJapanese Journal of Applied Physics, 1996
- Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and BoronJapanese Journal of Applied Physics, 1993