Direction of topography dependent damage current during plasma etching
- 27 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Assessment of charge-induced damage to ultra-thin gate MOSFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Dual Function of Thin MoO3 and WO3 Films as Negative and Positive Resists for Focused Ion Beam LithographyJapanese Journal of Applied Physics, 1996
- Charge Damage Caused by Electron Shading EffectJapanese Journal of Applied Physics, 1994
- New Phenomena of Charge Damage in Plasma Etching: Heavy Damage Only through Dense-Line AntennaJapanese Journal of Applied Physics, 1993