Theoretical Calculation of Normally-Off GaAs MESFET Characteristics Including Effects of Surface Depletion Layer
- 1 February 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (2A) , L77
- https://doi.org/10.1143/jjap.21.l77
Abstract
A theoretical analysis of the normally-off GaAs MESFET is presented, including the effects of a free-surface depletion layer between source and gate as well as between gate and drain. The calculated current-voltage characteristics are in satisfactory agreement with experimental results. The effects of recess depth, fluctuations in the thickness of the active layer and other device parameters are assessed quantitatively.Keywords
This publication has 4 references indexed in Scilit:
- Unified defect model and beyondJournal of Vacuum Science and Technology, 1980
- Current saturation and small-signal characteristics of GaAs field-effect transistorsIEEE Transactions on Electron Devices, 1973
- Voltage-current characteristics of GaAs J-FET's in the hot electron rangeSolid-State Electronics, 1970
- A Unipolar "Field-Effect" TransistorProceedings of the IRE, 1952