Lattice positions of implanted ions in silicon crystals
- 1 January 1984
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 83 (1-2) , 135-143
- https://doi.org/10.1080/00337578408215797
Abstract
Heavy ions from all groups of the periodic system have been implanted at keV energies into Si at room temperature. The samples have been analyzed in their as-implanted state by high resolution ion backscattering of 0.5 MeV 4He ions. The results show that only elements from groups IIIa, IVa and Va have dominant substitutional occupation, whereas in all other cases interstitial sites are largely preferred. It is concluded that chemical effects govern the selection of lattice sites.Keywords
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