Evidence for spike-effects in low-energy heavy-ion bombardment of Si and Ge
- 1 January 1977
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 32 (3) , 135-142
- https://doi.org/10.1080/00337577708233066
Abstract
A systematic investigation of implantation damage by various heavy tons (Z1 7) in the energy range 10-60 keV has been undertaken in Si and Ge at 50 and 300 K. In several cases, diatomic ions having the same energy per atom as the corresponding monatomic ions were also used. The results are interpreted in terms of the mean deposited energy density within each collision cascade. In all cases, the generally accepted collision cascade theory grossly underestimates the amount of observed damage and, at the higher deposited energy densities (i.e., Θ ≳ 0.1 eV/atom), non-linear effects provide strong evidence for the existence of spike phenomena.Keywords
This publication has 13 references indexed in Scilit:
- Measurement of damage distributions in ion bombarded Si, GaP and GaAs at 50 KNuclear Instruments and Methods, 1976
- Low energy ion induced damage in silicon at 50 KNuclear Instruments and Methods, 1976
- The energy dependence of gold selfsputteringNuclear Instruments and Methods, 1976
- Channeling measurements of damage in ion bombarded semiconductors at 50° KRadiation Effects, 1976
- On “measurements” of radiation damage by backscattering experimentsRadiation Effects, 1976
- Heavy-ion sputtering yields of gold: Further evidence of nonlinear effectsJournal of Applied Physics, 1975
- Energy density and time constant of heavy-ion-induced elastic-collision spikes in solidsApplied Physics Letters, 1974
- Stopping cross sections and backscattering factors for 4He ions in matter Z = 1–92, E(4He) = 400–4000 keVAtomic Data and Nuclear Data Tables, 1974
- On conversion from an energy scale to a depth scale in channelling experimentsThin Solid Films, 1973
- ON THE NUMBER OF ATOMS DISPLACED BY IMPLANTED IONS OR ENERGETIC RECOIL ATOMSApplied Physics Letters, 1969