Measurement of damage distributions in ion bombarded Si, GaP and GaAs at 50 K

This publication has 10 references indexed in Scilit:

• Comparison of measured and calculated damage distributions for light keV ion bombardment of solid surfaces
  Nuclear Instruments and Methods, 1976
• Stopping cross sections and backscattering factors for 4He ions in matter Z = 1–92, E(4He) = 400–4000 keV
  Atomic Data and Nuclear Data Tables, 1974
• Some new aspects for the evaluation of disorder profiles in silicon by backscattering
  Radiation Effects, 1973
• Stopping power of energetic helium ions transmitted through thin silicon crystals in channelling and random directions
  Radiation Effects, 1972
• Spatial distribution of defects in ion bombarded silicon and germanium
  Radiation Effects, 1971
• Analysis of disorder distributions in boron implanted silicon
  Radiation Effects, 1970
• Defect studies in crystals by means of channeling
  Canadian Journal of Physics, 1968
• Channeling of medium-mass ions through silicon
  Canadian Journal of Physics, 1968
• Energy Dissipation by Ions in the kev Region
  Physical Review B, 1961
• XXXIX. On the α particles of radium, and their loss of range in passing through various atoms and molecules
  Journal of Computers in Education, 1905