Study on the effect of plasma treatment on TiN films in N2/H2 atmosphere using x-ray reflectivity and secondary ion mass spectroscopy

We report the effect of plasma treatment on TiN films in ${\mathrm{N}}_2/{\mathrm{H}}_2$ atmosphere grown by chemical vapor deposition. The physical parameters and chemical evolution of the film as a function of duration of plasma treatment was studied using grazing incidence x-ray reflectivity (GIXR). From the analysis of GIXR we obtained the electron density profile of the film as a function of its depth. The GIXR data were analyzed using matrix method and distorted wave Born approximation scheme. Comparison of both the analysis schemes gives proper interpretation of the parameters obtained. The results obtained from the analysis of x-ray reflectivity data are supported by time of flight secondary ion mass spectroscopy depth profiling.