Analysis of carrier collection efficiencies of thin-film silicon solar cells
- 15 December 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (12) , 702-703
- https://doi.org/10.1063/1.1655367
Abstract
Carrier collection efficiencies in a silicon p ‐n junction solar cell are calculated as a function of base thickness for a range of 0.1–100 μm. Using the most realistic values of carrier diffusion lengths and surface recombination velocities, it is shown that thin‐film silicon cells can yield unexpectedly good efficiencies.Keywords
This publication has 3 references indexed in Scilit:
- Multiple-pass thin-film silicon solar cellApplied Physics Letters, 1974
- Surface Passivation of SemiconductorsJournal of Vacuum Science and Technology, 1971
- Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°KPhysical Review B, 1955