Raman tensor of covalent semiconductors
- 31 October 1983
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 48 (4) , 403-406
- https://doi.org/10.1016/0038-1098(83)90752-4
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- A Semi-empirical tight-binding theory of the electronic structure of semiconductors†Journal of Physics and Chemistry of Solids, 1983
- Theory of optical-phonon deformation potentials in tetrahedral semiconductorsPhysical Review B, 1981
- Semiconductor properties based upon universal tight-binding parametersPhysical Review B, 1981
- Theoretical study of the Raman cross section and its pressure dependence in siliconSolid State Communications, 1979
- Spin-orbit splitting in crystalline and compositionally disordered semiconductorsPhysical Review B, 1977
- Atomic densities of states near Si (111) surfacesPhysical Review B, 1976
- Special Points in the Brillouin ZonePhysical Review B, 1973
- Pressure Dependence of the Refractive Index of Amorphous Lone-Pair SemiconductorsPhysical Review B, 1972
- Raman tensor of germanium and zincblende-type semiconductorsSolid State Communications, 1971
- Pseudopotential calculation of the Raman tensor for homopolar semiconductorsSolid State Communications, 1970