Theoretical study of the Raman cross section and its pressure dependence in silicon
- 31 August 1979
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 31 (6) , 423-426
- https://doi.org/10.1016/0038-1098(79)90460-5
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
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- Pseudopotential calculation of the Raman tensor for homopolar semiconductorsSolid State Communications, 1970
- RAMAN SCATTERING IN SILICONApplied Physics Letters, 1965