Atomic-Layer Chemical-Vapor-Deposition of SiO 2 by Cyclic Exposures of CH 3OSi(NCO) 3 and H 2O 2
- 1 October 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (10R) , 5738-5742
- https://doi.org/10.1143/jjap.34.5738
Abstract
Atomic-layer chemical-vapor-deposition (AL-CVD) of SiO2 has been achieved by cyclic exposures of CH3OSi(NCO)3 and H2O2 at room temperature. The deposition rate was saturated at about 2.0 Å/cycle i.e., equal to the ideal quasi-monolayer/cycle. The surface roughness after 100 deposition cycles was found to be less than ±10 Å by atomic force microscopy (AFM). Film properties were also evaluated by auger electron spectroscopy (AES), X-ray photoemission spectroscopy (XPS), and Fourier transform IR (FT-IR) spectroscopy.Keywords
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