Dielectric effects in the optically stimulated electron spin resonance in silicon
- 1 June 1977
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (6) , 2556-2558
- https://doi.org/10.1063/1.323972
Abstract
The appearance of the photoinduced ESR lines is directly responsible for the dielectric effect caused by a change in spin‐dependent photoconductivity at resonance point. This appearance mechanism proposed in the optically stimulated ESR method is quite different from that of an ordinary ESR absorption line based on the paramagnetic absorption loss. A simple calculation to justify this model is made and typical features of the photoinduced ESR lines are explained in connection with the appearance mechanism.This publication has 6 references indexed in Scilit:
- Low Temperature Oxidation of Silicon Studied by Photosensitive ESR and Auger Electron SpectroscopyJournal of the Electrochemical Society, 1976
- Photoinduced Paramagnetic Defects on Silicon SurfaceJapanese Journal of Applied Physics, 1974
- Investigation of passivation mechanism in silicon surfaces by electron spin resonanceSurface Science, 1973
- Spin-Dependent Recombination on Silicon SurfacePhysical Review B, 1972
- Material-Properties Analyzers Using Superconducting ResonatorsJournal of Applied Physics, 1971
- Use of Superconducting Cavities to Resolve Carrier Trapping Effects in CdSJournal of Applied Physics, 1969