A simple new laser diode array model for thermal interaction analysis
- 1 November 1991
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (9) , 4715-4723
- https://doi.org/10.1063/1.349064
Abstract
A simple new laser diode array model using the boundary element method is presented. This model−which needs few boundary elements and little calculation time−represents a multilayer chip as a single-layer chip and distributed heat sources as a line heat source in the center of an active region, and neglects the grooves between array elements. For three types of laser diode array chips with element spacing greater than 50 μm, the simple model estimates thermal interactions to within 2%. The interactive thermal influence of laser diode array packing density and the number of elements is discussed in terms of this simple model: Submounts and stems with high thermal conductivity are shown to be effective for increasing the number of elements packed within an array chip. With a type-IIa diamond submount, for example, the number of elements packed within a 400-μm width on an array chip can be increased from five elements 100 μm apart to nine elements 50 μm apart without increasing thermal interaction.This publication has 21 references indexed in Scilit:
- Monolithic Eight-Channel High-Power Low-Astigmatism AlGaAs Laser Diode ArrayJapanese Journal of Applied Physics, 1989
- A ten-element array of individually addressable channeled- substrate-planar AlGaAs diode lasersIEEE Journal of Quantum Electronics, 1987
- Thermal model of laser diode arraysElectronics Letters, 1986
- Multichannel optical recording using monolithic arrays of diode lasersApplied Optics, 1984
- Heatsink requirements for coherent operation of high-power semiconductor laser arraysIEEE Journal of Quantum Electronics, 1984
- Stationary and transient thermal properties of semiconductor laser diodesIEEE Journal of Quantum Electronics, 1981
- Thermal resistance and temperature distribution in double-heterostructure lasers: Calculations and experimental resultsIEEE Journal of Quantum Electronics, 1979
- Thermal properties of semiconductor lasers, and the interpretation of thermal-resistance measurementsIEE Journal on Solidstate and Electron Devices, 1979
- Thermal performance and limitations of silicon–substrate packaged GaAs laser arraysApplied Optics, 1978
- Thermal-resistance models for proton-isolated double-heterostructure lasersIEE Journal on Solidstate and Electron Devices, 1978