Growth and characterization of Ga-doped ZnO layers on a-plane sapphire substrates grown by molecular beam epitaxy
- 6 December 2001
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 237-239, 538-543
- https://doi.org/10.1016/s0022-0248(01)01972-8
Abstract
No abstract availableKeywords
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