β‐CoGa‐ und ε‐NiIn‐Filme aus metallorganischen Einkomponentenvorstufen: Ligandenkontrolle der Schichtzusammensetzung
- 1 May 1993
- journal article
- zuschrift
- Published by Wiley in Angewandte Chemie
- Vol. 105 (5) , 778-780
- https://doi.org/10.1002/ange.19931050532
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Übergangsmetallsubstituierte flüchtige Alane, Gallane und Indane: Synthese und StrukturAngewandte Chemie, 1993
- Cover Picture (Angew. Chem. Int. Ed. Engl. 5/1993)Angewandte Chemie International Edition in English, 1993
- Epitaxial growth of cobalt-gallium on gallium arsenide by organometallic chemical vapor depositionChemistry of Materials, 1993
- Organoerdmetallkomplexe von d-block-elementenJournal of Organometallic Chemistry, 1992
- Copper(I) precursors for chemical vapor deposition of copper metalChemistry of Materials, 1992
- Chemical vapor deposition precursor chemistry. 2. Formation of pure aluminum, alumina, and aluminum boride thin films from boron-containing precursor compounds by chemical vapor depositionChemistry of Materials, 1992
- Chemical vapor deposition of cubic gallium sulfide thin films: a new metastable phaseChemistry of Materials, 1992
- Organoerdmetallkomplexe von d‐Block‐Elementen, III. Erste flüchtige Organogalliocobalt‐VerbindungenEuropean Journal of Inorganic Chemistry, 1992
- RHEED studies of epitaxial growth of CoGa on GaAs by MBE — determination of epitaxial phases and orientationsJournal of Crystal Growth, 1991
- Organometallic chemical vapor phase deposition of “Mn2Si”Thin Solid Films, 1988