Solid phase epitaxial regrowth of Si1−xGex/Si strained-layer structures amorphized by ion implantation
- 2 January 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (1) , 42-44
- https://doi.org/10.1063/1.100828
Abstract
Strained‐layer structures consisting of ∼30–35 nm Si1−xGex (x=0.16–0.29) and 33 nm Si deposited by molecular beam epitaxy on a (100)Si substrate have been amorphized by ion implantation at 40 K with 120 keV As+. Rutherford backscattering/channeling measurements using 2 MeV He+ ions have been used to measure the thickness of the amorphous layer and monitor the subsequent epitaxial regrowth occurring as a result of annealing at 560–600 °C. Angular scans across the {110} planar channels indicate that the initial crystallinity and strain was recovered for x=0.16; however, for x=0.29 crystal quality was greatly reduced and the coherency at the substrate‐alloy layer interface was destroyed.Keywords
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