SON (silicon on nothing)-a new device architecture for the ULSI era
- 20 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A novel device architecture called SON (silicon on nothing) is proposed, allowing extremely thin buried oxides and silicon films to be fabricated and thereby provide better resistance to short channel effects (SCE) and DIBL than any other device architecture. SON devices are shown to present excellent I/sub on//I/sub off/ trade-off, V/sub th/ roll-off suppression down to 15 nm channel length, and to be free from the shortcomings of conventional SOI, such as self-heating, high S/D series resistances, and expensive SOI substrates since SON devices are fabricated on bulk silicon.Keywords
This publication has 3 references indexed in Scilit:
- Scaling behavior of sub-micron MOSFETs on fully depleted SOISolid-State Electronics, 1996
- A New Scaling Methodology For The 0.1 - 0.025/spl mu/m MOSFETPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1993
- Scaling the Si MOSFET: from bulk to SOI to bulkIEEE Transactions on Electron Devices, 1992