Phosphorus-doped chemical vapor deposition of diamond
- 1 April 2000
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 9 (3-6) , 935-940
- https://doi.org/10.1016/s0925-9635(00)00217-x
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Electrical Contacts for n-Type DiamondJapanese Journal of Applied Physics, 1999
- Sulfur: A donor dopant forn-type diamond semiconductorsPhysical Review B, 1999
- Low-temperature spectroscopic study ofn-type diamondPhysical Review B, 1999
- Near-Band-Edge Luminescence Studies of Diamond Doped during CVD Growth or by Ion ImplantationPhysica Status Solidi (a), 1999
- Diamond films epitaxially grown by step-flow modeJournal of Crystal Growth, 1998
- Growth and characterization of phosphorous doped {111} homoepitaxial diamond thin filmsApplied Physics Letters, 1997
- Cathodoluminescence Studies of Bound Excitons and Near Band Gap Emission Lines in Boron- and Phosphorus-Doped CVD-DiamondsMRS Proceedings, 1996
- Electrical characterization of homoepitaxial diamond films doped with B, P, Li and Na during crystal growthDiamond and Related Materials, 1995
- Semiconducting diamonds made in the USSRDiamond and Related Materials, 1992
- Synthesis of n-type semiconducting diamond film using diphosphorus pentaoxide as the doping sourceApplied Physics A, 1990