Annealing of boron-implanted corrosion resistant copper films
- 15 July 1993
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 74 (2) , 1331-1334
- https://doi.org/10.1063/1.354913
Abstract
Ion implantation can be used effectively to passivate copper. The effect of B ion implantation on the oxidization rate of copper is studied as a function of B energy and dose. The increase of sheet resistance associated with ion implantation damage and with the incorporation of B is studied. It is found that a post-implantation inert gas annealing (at 400 °C for 20 min) removes the increase in sheet resistance caused by implant damage while preserving the passivation effects of the B implant.This publication has 9 references indexed in Scilit:
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