Electronic structure and band discontinuities in the InAs/GaAs system
- 11 June 1990
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 2 (23) , 5153-5160
- https://doi.org/10.1088/0953-8984/2/23/005
Abstract
The electronic band structures of the lattice mismatched InAs/GaAs system has been calculated for three different lattice constants using ab initio pseudopotentials. The effect of strain on the band discontinuities has been investigated with respect to the interface interlayer separation as well as the strain. The superlattice electronic structure is examined within the context of interface states and charge localisation.Keywords
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