Carrier conduction and trapping in metal-nitride-oxide-semiconductor structures
- 1 December 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (12) , 8880-8885
- https://doi.org/10.1063/1.330442
Abstract
Carrier conduction and trapping in metal-nitride-oxide-semiconductor structures are investigated. It is clearly shown that holes dominate the carrier conduction in the nitride for both gate polarities, and electrons injected into the nitride from a cathode are almost completely annihilated by recombination in the nitride with holes injected from an anode, which is revealed by an induced junction technique. A model that the memory traps in the nitride act as the recombination centers in steady-state conditions is proposed. The recombination distance, the capture cross section, and the density of the memory traps or the recombination centers are estimated to be 81 Å, 2.86×10−13 cm2, and 4.32×1018/cm3, respectively, by fitting the experimental results with the theory based on the proposed model.This publication has 17 references indexed in Scilit:
- Characterization of current transport in MNOS structures with complementary tunneling emitter bipolar transistorsIEEE Transactions on Electron Devices, 1979
- A review of recent experiments pertaining to hole transport in Si3N4IEEE Transactions on Electron Devices, 1978
- Charge centroid in MNOS devicesJournal of Applied Physics, 1977
- Theory of MNOS memory transistorIEEE Transactions on Electron Devices, 1977
- Transient conduction in insulators at high fieldsJournal of Applied Physics, 1975
- Hole conduction and valence-band structure of Si3N4 films on SiApplied Physics Letters, 1975
- Silicon nitride trap properties as revealed by charge−centroid measurements on MNOS devicesApplied Physics Letters, 1975
- Two-band conduction of amorphous silicon nitridePhysica Status Solidi (a), 1974
- Multiple potential-well structure created by electron injection in spherical geometryApplied Physics Letters, 1973
- Current Transport and Maximum Dielectric Strength of Silicon Nitride FilmsJournal of Applied Physics, 1967