Electromigration in p-type ZnSe:Li
- 18 March 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (11) , 1173-1174
- https://doi.org/10.1063/1.104355
Abstract
Electromigration has been observed in certain Li-doped p-type ZnSe epitaxial layers. A correlation is observed between the magnitude of the electromigration and the degree of compensation in the layers, which is consistent with electromigration of Li interstitials. Significantly, uncompensated layers show no electromigration, illustrating that Li atoms on Zn lattice sites (acceptors) are stable at room temperature. The effects of electromigration on the behavior of ZnSe blue light-emitting diodes is considered, and shown to be beneficial in devices with compensated p-type layers.Keywords
This publication has 8 references indexed in Scilit:
- ZnSe light-emitting diodesApplied Physics Letters, 1990
- Characterization of p-type ZnSeJournal of Applied Physics, 1990
- Electrical characterization of p-type ZnSeApplied Physics Letters, 1989
- Growth of p- and n-type ZnSe by molecular beam epitaxyJournal of Crystal Growth, 1989
- Metalorganic vapor phase epitaxy of low-resistivity p-type ZnSeApplied Physics Letters, 1988
- Growth of undoped ZnSe on (100) GaAs by molecular-beam epitaxy: An investigation of the effects of growth temperature and beam pressure ratioJournal of Applied Physics, 1987
- Optical Studies of Shallow Acceptors in CdS and CdSePhysical Review B, 1971
- Ion Drift in an n-p JunctionJournal of Applied Physics, 1960