Arsenic flux dependence of incorporation of excess arsenic in molecular beam epitaxy of GaAs at low temperature
- 14 September 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (11) , 1529-1531
- https://doi.org/10.1063/1.122195
Abstract
Incorporation of excess As in GaAs layers grown by molecular beam epitaxy was studied by varying As fluxes for four different substrate temperatures, 210,240,270, and 290℃. Concentrations of excess As in GaAs layers were estimated by measuring increases of lattice spacings with x-ray diffraction, and the substrate surface temperature was monitored by using a quartz rod connected to an infrared pyrometer with its end placed in the vicinity of the substrate surface. Nearly stoichiometric GaAs layers without any detectable increase of the lattice spacing are grown at all substrate temperatures under the As atom flux equal to the Ga atom flux. With a slight increase of the As flux from the above stoichiometric condition, the concentration of excess As sharply increases for all substrate temperatures. For the substrate temperature of 210℃, the concentration of excess As is saturated in the range of As atom fluxes more than three times the Ga atom flux, while similar tendencies are observed for other substrate temperatures. The incorporation process of excess As is discussed on the basis of these resultsKeywords
This publication has 18 references indexed in Scilit:
- Reflection high-energy electron diffraction oscillations during growth of GaAs at low temperatures under high As overpressureApplied Physics Letters, 1997
- Diffuse reflectance spectroscopy measurement of substrate temperature and temperature transient during molecular beam epitaxy and implications for low-temperature III–V epitaxyApplied Physics Letters, 1997
- Effect of As4/Ga flux ratio on electrical and optical properties of low-temperature GaAs grown by molecular beam epitaxyJournal of Applied Physics, 1994
- Effects of As4 flux on reflection high-energy electron diffraction oscillations during growth of GaAs at low temperaturesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Substrate temperature dependence of arsenic precipitate formation in AlGaAs and GaAsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Breakdown of crystallinity in low-temperature-grown GaAs layersApplied Physics Letters, 1991
- Limited thickness epitaxy in GaAs molecular beam epitaxy near 200 °CApplied Physics Letters, 1991
- Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperaturesApplied Physics Letters, 1990
- Stoichiometry-related defects in GaAs grown by molecular-beam epitaxy at low temperaturesJournal of Vacuum Science & Technology B, 1989
- Ohmic Contacts to Solution-Grown Gallium ArsenideJournal of Applied Physics, 1969