Diffuse reflectance spectroscopy measurement of substrate temperature and temperature transient during molecular beam epitaxy and implications for low-temperature III–V epitaxy

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Abstract
We report diffuse reflectance spectroscopy (DRS) measurement of Knudsen cell induced radiative heating of the sample during molecular beam epitaxy of GaAs at substrate temperatures between 200 and 600 °C. The temperature rises, as large as 12 °C, were observed for In-bonded samples at a substrate temperature of 200 °C. As-grown GaAs layers deposited between 200 and 300 °C are characterized using double crystal x-ray diffraction. The onset of a distinct x-ray peak associated with the low-temperature grown GaAs layer is identified, at a DRS measured temperature between 260 and 270 °C.