Crystal Structure Of Lt Gaas Layers Before And After Annealing

Publisher Website
Google Scholar
Abstract
The structural quality of GaAs layers grown at low temperatures by solid-source and gassource MBE at different growth conditions is described. Dependence on the growth temperature and concentration of As [expressed as As/Ga beam equivalent pressure (BEP)] used for the growth is discussed. A higher growth temperature is required to obtain the same monocrystalline layer thickness with increased BEP The annealing of these layers is associated with the formation of As precipitates. Semicoherent precipitates with lowest formation energies arc formed in the monocrystalline parts of the layers grown with the lowest BEP. Precipitates with higher bormation energies are formed when higher BEP is applied; they are also formed in the vicinity of structural defects. Formation of As precipitates releases strain in the layers. Arsenic precipitates are not formed in annealed ternary (InAlAs) layers despite their semi-insulating properties. The role of As precipitates in semi-insulating properties and the short lifetime of minority carriers in these layers is discussed.