Influence of growth temperatures on the photoresponse of low temperature grown GaAs:As p-i-n diodes
- 1 December 1993
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 22 (12) , 1457-1459
- https://doi.org/10.1007/bf02649998
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Device Applications of Low-Temperature-Grown GaAsMRS Proceedings, 1991
- Incorporation of Excess Arsenic in GaAs and AlGaAs Epilayers Grown at Low Substrate Temperatures by Molecular Beam EpitaxyMRS Proceedings, 1991
- Crystal Structure Of Lt Gaas Layers Before And After AnnealingMRS Proceedings, 1991
- Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperaturesApplied Physics Letters, 1990
- Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxyApplied Physics Letters, 1990
- Low-temperature buffer GaAs MESFET technology for high-speed integrated circuit applicationsIEEE Electron Device Letters, 1989
- Stoichiometry-related defects in GaAs grown by molecular-beam epitaxy at low temperaturesJournal of Vacuum Science & Technology B, 1989
- Structural properties of As-rich GaAs grown by molecular beam epitaxy at low temperaturesApplied Physics Letters, 1989
- New MBE buffer used to eliminate backgating in GaAs MESFETsIEEE Electron Device Letters, 1988
- Growth temperature dependence in molecular beam epitaxy of gallium arsenideJournal of Crystal Growth, 1978