New Transparent Conductive Oxides with YbFe2O4 Structure

Publisher Website
Google Scholar
Abstract
InGaMgO4 and InGaZnO4 crystals with the YbFe2O4 layered structure have been found to be transparent conductive oxides. The band gaps of these crystals were wider than that of In2O3. Conductivity was induced by doping with electrons through introduction of oxygen vacancies. Mobility, carrier density and conductivity of sintered bodies of InGaMgO4 were 2 cm2/V·s, 1×1018/cm3 and 0.5 S/cm, respectively. Those of InGaZnO4 were 20 cm2/V·s, 4×1019/cm3 and 120 S/cm. A promising method to improve the conductivity to a value sufficient for practical use is discussed.