Photoconductivity and recombination dynamics for a-Si:H at different thicknesses
- 1 November 1988
- journal article
- Published by Elsevier in Solar Cells
- Vol. 25 (2) , 169-179
- https://doi.org/10.1016/0379-6787(88)90021-x
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Thickness dependence of photoelectrical properties of intrinsic amorphous siliconSolar Cells, 1988
- Physics of amorphous silicon based alloy field-effect transistorsJournal of Applied Physics, 1984
- Recombination processes in-Si:H: Spin-dependent photoconductivityPhysical Review B, 1983
- Photoconductivity and dark conductivity of hydrogenated amorphous siliconSolid State Communications, 1983
- Photoconductivity and recombination in doped amorphous siliconPhilosophical Magazine, 1977