Electroreflectance of indium gallium arsenide phosphide lattice matched to indium phosphide
- 15 June 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (12) , 978-980
- https://doi.org/10.1063/1.91389
Abstract
We report the first systematic measurement of the electroreflectance spectra of InuGa1−uPvAs1−v over the range of compositions that lattice‐match InP substrates, at room temperature and for energies between 0.7 and 3.5 eV. Analysis of the spectra has enabled us to determine the composition dependence of E0, E0+Δ0, E1, E1+Δ1, Δ0, and Δ1. Experimentally determined values of E0, E0+Δ0, and m*/m0 have been used to predict the values of the g factors for these compounds.Keywords
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