Measurement of effective mass in In0.9Ga0.1As0.22P0.78 by Shubnikov–de Haas oscillations
- 1 February 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (3) , 189-190
- https://doi.org/10.1063/1.89984
Abstract
The 0 K electron effective mass in an In0.9Ga0.1As0.22P0.78epitaxial layer has been calculated from the temperature dependence of Shubnikov–de Haas oscillation amplitudes, giving m*=0.060m 0. The measured value is compared to values m*=0.059m 0 and m*=0.058m 0 obtained from interpolations of the masses of related binary compounds by two different methods.Keywords
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