Impurity Effects upon Mobility in Silicon

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Abstract
In sufficiently pure n‐type silicon, the carrier mobility follows a T−1.5 law at low temperature and agrees well with Herring's theory of lattice scattering mobility. Similar results for p‐type silicon give a T−2 law for the temperature dependence and is in disagreement with theory. In less pure samples, scattering is by ionized impurities and the magnitude of the mobility reduction agrees well with the theory of Herring and Brooks. Scattering by large concentrations (∼1018 cm−3) of dissolved neutral oxygen is negligible compared to that by other mechanisms.