Novel magnetoresistance behavior in single trilayer spin valves

Abstract
Single trilayer spin valves consisting of uncapped FeNi(60 Å)/Cu(60 Å)/Co(40 Å) have been grown using ultrahigh vacuum (UHV) electron beam evaporation methods. Room temperature magnetoresistance (MR) measurements exhibit well defined plateaux corresponding to the full antiparallel alignment of the FeNi and Co magnetizations. This sharp switching behavior and precisely defined antiferrimagnetic state is in contrast with the corresponding behavior reported for FeNi/Cu/Co multilayers.