Numerical simulation of GaAs MESFETS including velocity overshoot
- 31 August 1987
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 30 (8) , 873-877
- https://doi.org/10.1016/0038-1101(87)90015-3
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Influence of hydrogen implantation on properties of n+p polycrystalline silicon solar cellsSolid-State Electronics, 1986
- Very short gate-length GaAs MESFET'sIEEE Electron Device Letters, 1985
- Accurate modeling for submicrometer-gate Si and GaAs MESFET's using two-dimensional particle simulationIEEE Transactions on Electron Devices, 1983
- Two-dimensional numerical simulation of energy transport effects in Si and GaAs MESFET'sIEEE Transactions on Electron Devices, 1982
- A temperature model for the GaAs MESFETIEEE Transactions on Electron Devices, 1981
- Physical basis of short-channel MESFET operationIEEE Transactions on Electron Devices, 1979
- Electron mobility and free-carrier absorption in GaAs: Determination of the compensation ratioJournal of Applied Physics, 1979
- Transient and steady-state electron transport properties of GaAs and InPJournal of Applied Physics, 1977
- Electron dynamics in short channel field-effect transistorsIEEE Transactions on Electron Devices, 1972
- Transport equations for electrons in two-valley semiconductorsIEEE Transactions on Electron Devices, 1970