Principles of a phenomenological theory of Gunn-effect domain dynamics
- 30 June 1968
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 11 (6) , 583-598
- https://doi.org/10.1016/0038-1101(68)90011-7
Abstract
No abstract availableKeywords
This publication has 33 references indexed in Scilit:
- Determination of the negative differential mobility of n-type gallium arsenide using 8 mm-microwavesPhysics Letters A, 1967
- Measurement of the negative differential mobility of electron in GaAsPhysics Letters, 1966
- Stable Space-Charge Layers in Two-Valley SemiconductorsJournal of Applied Physics, 1966
- A simple analysis of stable domain propagation in the Gunn effectBritish Journal of Applied Physics, 1966
- Negative resistance due to mixed scatteringPhysics Letters, 1966
- Field dependence of mobility in the (100) conduction band minima of GaAsPhysics Letters, 1966
- Theory of negative-conductance amplification and of Gunn instabilities in "two-valley" semiconductorsIEEE Transactions on Electron Devices, 1966
- Nonlinear space-charge domain dynamics in a semiconductor with negative differential mobilityIEEE Transactions on Electron Devices, 1966
- Specific Negative Resistance in SolidsProceedings of the Physical Society, 1963
- The Possibility of Negative Resistance Effects in SemiconductorsProceedings of the Physical Society, 1961