Determination of the negative differential mobility of n-type gallium arsenide using 8 mm-microwaves
- 13 February 1967
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 24 (4) , 200-202
- https://doi.org/10.1016/0375-9601(67)90562-2
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Potential distribution and field dependence of electron velocity in bulk GaAs measured with a point-contact probeElectronics Letters, 1966
- BULK GaAs NEGATIVE CONDUCTANCE AMPLIFIERSApplied Physics Letters, 1966
- Measurement of the negative differential mobility of electron in GaAsPhysics Letters, 1966
- Theory of negative-conductance amplification and of Gunn instabilities in "two-valley" semiconductorsIEEE Transactions on Electron Devices, 1966
- Instabilities of Current in III–V SemiconductorsIBM Journal of Research and Development, 1964
- High-Field Conductivity in Germanium and Silicon at Microwave FrequenciesJournal of Applied Physics, 1961