The Use of Time-Domain Techniques for Microwave Transistor s-Parameter Measurements
- 1 January 1977
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Instrumentation and Measurement
- Vol. 26 (4) , 383-388
- https://doi.org/10.1109/tim.1977.4314581
Abstract
The determination of microwave transistor s parameters over a frequency band up to 10 GHz by means of timedomain techniques, involving Fourier analysis and deconvolution of transient response data, is described. Details of the measurement system are presented and advantages of such techniques over conventional network analyzer techniques are discussed. Results obtained for developmental ion-implanted/diffused-silicon bipolar transistors with ft values above 5 GHz are presented.Keywords
This publication has 5 references indexed in Scilit:
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- The Use of Time Domain Techniques for Microwave Transistor s-Parameter MeasurementsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1975
- Time-Domain Measurements of Microwave ComponentsIEEE Transactions on Instrumentation and Measurement, 1973
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- Time-domain measurements for transistor and network characterization up to 1 GcProceedings of the IEEE, 1965