Microwave and thermal characteristics of backside-connectedflip-chip power heterojunction bipolar transistors
- 26 September 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (20) , 1931-1932
- https://doi.org/10.1049/el:19961236
Abstract
Measured and modelled characteristics are reported for a new geometry for contacting AlGaAs/GaAs heterojunction bipolar transistors (HBTs), which provides lower thermal resistance and lower emitter inductance than does the conventional approach. Common-emitter connected HBTs are mounted emitter side down on a metal heatsink, which also serves as electrical ground. Connections to the base and collector are made with substrate vias that extend through the GaAs substrate from the backside of the wafer. This configuration was measured to have values of thermal resistance as small as 0.23 K/mW for a 132 µm2 emitter area HBT, in agreement with simulations. An output power per unit emitter area of 2.9 mW/µm2 (total power of 370 mW) at 9 GHz was observed.Keywords
This publication has 3 references indexed in Scilit:
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- High-performance low-base-collector capacitance AlGaAs/GaAs heterojunction bipolar transistors fabricated by deep ion implantationIEEE Electron Device Letters, 1995
- Novel HBT with reduced thermal impedanceIEEE Microwave and Guided Wave Letters, 1995