Novel HBT with reduced thermal impedance
- 1 January 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 5 (11) , 373-375
- https://doi.org/10.1109/75.473538
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Bump heat sink technology - A novel assembly technology suitable for power HBTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Microwave/millimeter-wave power HBTs with regrown extrinsic base layersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- The collapse of current gain in multi-finger heterojunction bipolar transistors: its substrate temperature dependence, instability criteria, and modelingIEEE Transactions on Electron Devices, 1994
- Improved thermal performance of AlGaAs/GaAs HBTs by transferring the epitaxial layers to high-thermal-conductivity substratesElectronics Letters, 1993
- Very high-power-density CW operation of GaAs/AlGaAs microwave heterojunction bipolar transistorsIEEE Electron Device Letters, 1993