Nanometer-scale switches using copper sulfide
Top Cited Papers
- 29 April 2003
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 82 (18) , 3032-3034
- https://doi.org/10.1063/1.1572964
Abstract
We describe a nanometer-scale switch that uses a copper sulfide film and demonstrate its performance. The switch consists of a copper sulfide film, which is a chalcogenide semiconductor, sandwiched between copper and metal electrodes. Applying a positive or negative voltage to the metal electrode can repeatedly switch its conductance in under 100 μs. Each state can persist without a power supply for months, demonstrating the feasibility of nonvolatile memory with its nanometer scale. While biasing voltages, copper ions can migrate in copper sulfide film and can play an important role in switching.Keywords
This publication has 11 references indexed in Scilit:
- Ionic/electronic mixed conductor tip of a scanning tunneling microscope as a metal atom source for nanostructuringApplied Physics Letters, 2002
- Quantized conductance in Au-Pd and Au-Ag alloy nanocontactsPhysical Review B, 2002
- Molecular random access memory cellApplied Physics Letters, 2001
- Nanometer-scale resolution of a chloromethylated calixarene negative resist in electron-beam lithography: Dependence on the number of phenolic residuesApplied Physics Letters, 2000
- Electronically Configurable Molecular-Based Logic GatesScience, 1999
- Single- and multi-wall carbon nanotube field-effect transistorsApplied Physics Letters, 1998
- Quantized conductance through individual rows of suspended gold atomsNature, 1998
- Quantized electron transport in amorphous-silicon memory structuresPhysical Review Letters, 1991
- Hall effect in reactively sputtered Cu2SApplied Physics Letters, 1979
- Reversible Electrical Switching Phenomena in Disordered StructuresPhysical Review Letters, 1968