Nanometer-scale resolution of a chloromethylated calixarene negative resist in electron-beam lithography: Dependence on the number of phenolic residues
- 30 June 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (2) , 301-303
- https://doi.org/10.1063/1.126957
Abstract
We have investigated a chloromethylated calixarene, as a negative resist in electron-beam lithography. Each resist has a resolution of about 12 nm and a sensitivity of about which varies slightly with n (or molecular weight). A sub-10-nm Si wire has been fabricated by halide plasma etching and a resist as an etching mask. Because the resist pattern edge is smooth, Si wires with 7-nm width and length were performed without any breaking.
Keywords
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