Fabrication of 30 nm gate length electrically variable shallow-junction metal–oxide–semiconductor field-effect transistors using a calixarene resist
- 1 November 1997
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 15 (6) , 2806-2808
- https://doi.org/10.1116/1.589732
Abstract
We have fabricated electrically variable shallow-junction metal–oxide–semiconductor field-effect transistors (EJ-MOSFETs) with an ultrafine gate for the first time. The gate length was reduced to 32 nm by using electron-beam lithography with a calixarene resist, which has an under 10 nm resolution with a sharp pattern edge. Moreover, normal transistor operation of 32 nm gate-length EJ-MOSFETs was confirmed.Keywords
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