Gate technology for 70 nm metal–oxide–semiconductor field-effect transistors with ultrathin (<2 nm) oxides

This publication has 2 references indexed in Scilit:

• 1.5 nm direct-tunneling gate oxide Si MOSFET's
  IEEE Transactions on Electron Devices, 1996
• Spatial resolution limits in electron beam nanolithography
  Journal of Vacuum Science & Technology B, 1983