Integrated dE-E detector system made by ion implantation
- 15 December 1973
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 23 (12) , 704-705
- https://doi.org/10.1063/1.1654797
Abstract
Boron and phosphorus ions of 8‐MeV and 6‐keV energy, respectively, have been implanted into silicon single crystals to form a n+‐n‐p+‐n‐n+ structure. Tests of this duodiode nuclear detector system with 5.5‐MeV α particles yielded resolutions of about 100 keV (FWHM).Keywords
This publication has 7 references indexed in Scilit:
- Electrical properties of silicon implanted with boron ions of MeV energyRadiation Effects, 1973
- Integrated E and dE/dχ semiconductor particle detectors made by ion implantationNuclear Instruments and Methods, 1969
- Characteristics of ion-implanted contacts for nuclear particle detectors: I. Window thickness of ion-implanted semiconductor detectorsNuclear Instruments and Methods, 1969
- Use of ion implantation techniques to fabricate semiconductor nuclear particle detectorsNuclear Instruments and Methods, 1968
- Semiconductor Doping by High Energy 1–2.5 Mev Ion ImplantationJournal of the Electrochemical Society, 1968
- ION IMPLANTATION OF SILICON: II. ELECTRICAL EVALUATION USING HALL-EFFECT MEASUREMENTSCanadian Journal of Physics, 1967
- The fabrication of high quality silicon junction detectors by low energy ion implantationThe European Physical Journal A, 1967