Amorphization and Crystallization of Semiconductors
- 1 January 1984
- book chapter
- Published by Elsevier
Abstract
No abstract availableThis publication has 60 references indexed in Scilit:
- Displacement criterion for amorphization of silicon during ion implantationJournal of Applied Physics, 1981
- Concentration dependence of the solid-phase epitaxial growth rate in Te implanted SiApplied Physics A, 1981
- Phase Transitions in Amorphous Si Produced by Rapid HeatingPhysical Review Letters, 1980
- Solute trapping by moving interface in ion-implanted siliconApplied Physics Letters, 1980
- Supersaturated solid solutions after solid phase epitaxial growth in Bi-implanted siliconApplied Physics Letters, 1980
- Incorporation of implanted In and Sb in silicon during amorphous layer regrowthJournal of Applied Physics, 1979
- Substrate-orientation dependence of the epitaxial regrowth rate from Si-implanted amorphous SiJournal of Applied Physics, 1978
- Reordering of amorphous layers of Si implanted with 31P, 75As, and 11B ionsJournal of Applied Physics, 1977
- Chaneling effect measurements of the recrystallization of amorphous Si layers on crystal SiPhysics Letters A, 1975
- Temperature Dependence of Ovshinsky-Type DevicesJournal of Applied Physics, 1969