Energy deposition of energetic silicon atoms within a silicon lattice
- 1 April 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review A
- Vol. 41 (7) , 4058-4061
- https://doi.org/10.1103/physreva.41.4058
Abstract
The energy dependence of the ionization produced in silicon by recoiling silicon atoms was measured in the 4–54-keV energy interval. It is found that the fraction of the recoil energy that is dissipated as ionization follows an dependence which agrees well with the predictions of the theory of Lindhard et al. [Mat. Fys. Medd. 33, 10 (1963)].
Keywords
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