Defect structure of InxGa1−xAs/GaAs grown on misoriented (100) silicon by molecular beam epitaxy
- 1 May 1989
- journal article
- Published by Elsevier in Materials Letters
- Vol. 8 (3-4) , 109-111
- https://doi.org/10.1016/0167-577x(89)90138-9
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Properties of MBE grown InSb and InSb1−xBixJournal of Vacuum Science & Technology A, 1983