MBE Growth of Ga1-xInxAs Alloy on Si Substrate
- 1 February 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (2A) , L120
- https://doi.org/10.1143/jjap.26.l120
Abstract
Ga1-x In x As ternary alloy layers were successfully grown on Si substrates by molecular beam epitaxy for the first time. Layer characterization by RHEED, X-ray diffraction and room temperature photoluminescence reveal that single domain Ga1-x In x As alloys which cover the 1.2∼1.6 µm wavelength region can be grown by a two-step growth method.Keywords
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