The tracer diffusion of Ge in Ni single crystals
- 1 July 1983
- journal article
- Published by IOP Publishing in Journal of Physics F: Metal Physics
- Vol. 13 (7) , 1441-1448
- https://doi.org/10.1088/0305-4608/13/7/014
Abstract
The diffusion of 68Ge in single crystals of high-purity (over 99.99% pure) Ni has been measured using the sectioning technique. The plot of log D versus 1/T is straight from 939 to 1675K, over 61/2 orders of magnitude in D, with parameters D0=2.10+or-0.47 cm2 s-1, Q=2.74+or-0.03 eV (264+or-3 kJ mol-1). The data suggest a low Ge-vacancy binding enthalpy for Ni.Keywords
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