Structural and electrical properties of Al2O3 thin films on p-Si grown by low-pressure metalorganic chemical vapor deposition

This publication has 8 references indexed in Scilit:

• High charge storage in amorphous BaTiO3 thin films
  Applied Physics Letters, 1991
• High T c Y-Ba-Cu-O thin films prepared by i n s i t u low-temperature codeposition of Y, BaF2, and Cu on α-Al2O3 substrates
  Applied Physics Letters, 1990
• Pulsed laser deposition of barium titanate films on silicon
  Solid State Communications, 1989
• Epitaxial Y-Ba-Cu-O films on Si with intermediate layer by rf magnetron sputtering
  Applied Physics Letters, 1988
• Metalorganic molecular beam epitaxy of γ-Al2O3 films on Si at low growth temperatures
  Applied Physics Letters, 1988
• Epitaxial Al2O3 films on Si by low-pressure chemical vapor deposition
  Applied Physics Letters, 1988
• Growth of an epitaxial insulator-metal-semiconductor structure on Si by molecular beam epitaxy
  Applied Physics Letters, 1986
• An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes
  Solid-State Electronics, 1962